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vishay tlmk / o / s / y320. document number 83146 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 1 19210 c a c e3 pb pb-free power smd led in plcc-3 package description the tlm.32.. series is an advanced development in terms of heat dissipation. the leadframe profile of this plcc-3 smd package is optimized to reduce the thermal resistance. this allows higher drive current and doubles the light output compared to vishay?s high intensity smd led in plcc-2 package. features utilizing alingap technology angle of half intensity ? = 60 available in 8 mm tape luninous intensity, color and forward voltage categorized per packing unit luminous intensity ratio per packing unit i vmax /i vmin 1.6 esd class 2 suitable for all soldering methods according to cecc lead-free device applications traffic signals and signs interior and exterior lighting dashboard illumination indicator and backlighting purposes for audio, video, lcd?s switches, symbols, illuminated advertising etc. parts table part color, luminous intensity dominant wavelength tlmk3200 red, i v > 200 mcd (typ. 500 mcd) 611 nm to 622 nm tlmk3201 red, i v = (250 to 800) mcd 611 nm to 622 nm tlmk3202 red, i v = (320 to 800) mcd 611 nm to 622 nm tlmk3203 red, i v = (400 to 1250) mcd 611 nm to 622 nm tlms3200 red, i v > 160 mcd (typ. 300 mcd) 626 nm to 638 nm tlms3201 red, i v = (160 to 400) mcd 626 nm to 638 nm tlms3202 red, i v = (250 to 800) mcd 626 nm to 638 nm tlmo3200 soft orange, i v > 200 mcd (typ. 500 mcd) 600 nm to 611 nm tlmo3201 soft orange, i v = (250 to 800) mcd 600 nm to 611 nm tlmo3202 soft orange, i v = (320 to 800) mcd 600 nm to 611 nm tlmo3203 soft orange, i v = (400 to 1250) mcd 600 nm to 611 nm TLMY3200 yellow, i v > 200 mcd (typ. 450 mcd) 583 nm to 594 nm tlmy3201 yellow, i v = (250 to 800) mcd 583 nm to 594 nm tlmy3202 yellow, i v = (320 to 800) mcd 583 nm to 594 nm tlmy3203 yellow, i v = (400 to 1250) mcd 583 nm to 594 nm
www.vishay.com 2 document number 83146 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y320. vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified tlmk32.., tlms32.., tlmo32.., tlmy32.. optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlmk32.. red tlms32.. parameter test condition symbol value unit reverse voltage v r 5v forward current i f 70 ma power dissipation t amb 65 c (290 k/w), t amb 70 c (270 k/w) p tot 180 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/ambient mounted on pc board fr4 optional paddesign (see page 12) r thja 290 k/w mounted on pc board fr4 recommended paddesign (see page 11) r thja 270 k/w parameter test condition part symbol min ty p. max unit luminous intensity i f = 50 ma tlmk3200 i v 200 500 mcd tlmk3201 i v 250 800 mcd tlmk3202 i v 320 800 mcd tlmk3203 i v 400 1250 mcd luminous flux/luminous intensity v /i v 3mlm/ mcd dominant wavelength i f = 50 ma d 611 617 622 nm peak wavelength i f = 50 ma p 624 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a parameter test condition part symbol min ty p. max unit luminous intensity i f = 50 ma tlms3200 i v 160 300 mcd tlms3201 i v 160 400 mcd tlms3202 i v 250 800 mcd luminous flux/luminous intensity v /i v 3mlm/ mcd dominant wavelength i f = 50 ma d 626 630 638 nm peak wavelength i f = 50 ma p 641 nm
vishay tlmk / o / s / y320. document number 83146 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 3 soft orange tlmo32.. yellow tlmy32.. spectral bandwidth at 50 % i rel max i f = 50 ma ? 17 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a parameter test condition part symbol min ty p. max unit luminous intensity i f = 50 ma tlmo3200 i v 200 500 mcd tlmo3201 i v 250 800 mcd tlmo3202 i v 320 800 mcd tlmo3203 i v 400 1250 mcd luminous flux/luminous intensity v /i v 3mlm/ mcd dominant wavelength i f = 50 ma d 600 605 611 nm peak wavelength i f = 50 ma p 611 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 17 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a parameter test condition part symbol min ty p. max unit luminous intensity i f = 50 ma TLMY3200 i v 200 450 mcd tlmy3201 i v 250 800 mcd tlmy3202 i v 320 800 mcd tlmy3203 i v 400 1250 mcd luminous flux/luminous intensity v /i v 3mlm/ mcd dominant wavelength i f = 50 ma d 583 588 594 nm peak wavelength i f = 50 ma p 590 nm spectral bandwidth at 50 % i rel max i f = 50 ma ? 18 nm angle of half intensity i f = 50 ma ? 60 deg forward voltage i f = 50 ma v f 1.85 2.1 2.55 v reverse current v r = 5 v v r 0.01 10 a parameter test condition part symbol min ty p. max unit
www.vishay.com 4 document number 83146 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y320. vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. rel. luminous intens ity vs. angular displacement 0 20 40 60 80 100 120 140 160 180 200 0 25 50 75 100 125 18567 r thja = 290 k/w v p - power dissipation ( mw ) t amb - ambient t emperature ( c) 270 k/w 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 18568 f i - forward current ( ma ) t amb - ambient t emperature ( c) r thja = 290 k/w 270 k/w 0.4 0.2 0 0.2 0.4 0.6 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity vre l figure 4. relative intensity vs. wavelength figure 5. change of forward voltage vs. ambient temperature figure 6. relative luminous intensity vs. amb. temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 570 580 590 600 610 620 630 640 650 660 670 - wavelength ( nm ) 16007 i - relative luminous intensity vrel red ?200 ?150 ?100 ?50 0 50 100 150 200 250 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17034 v ? change of forward voltage (mv) f 10 ma 30 ma 50 ma red 0.0 0.5 1.0 1.5 2.0 2.5 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17035 i ?relative luminous intensity vrel red
vishay tlmk / o / s / y320. document number 83146 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 5 figure 7. change of dominant wavelength vs. ambient temperature figure 8. relative luminous intensity vs. forward current figure 9. change of dominant wavelength vs. forward current ?6 ?4 ?2 0 2 4 6 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17036 ? change of dom. wavelength (nm) d red 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forward current ( ma ) 17037 i ?relative luminous intensity vrel red ?1.5 ?1.0 ?0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 80 90 100 17038 ? change of dom. wavelength (nm) d i f ? forward current ( ma ) red figure 10. relative intensity vs. wavelength figure 11. forward current vs. forward voltage figure 12. change of forward voltage vs. ambient temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 600 610 620 630 640 650 660 670 680 690 700 17045 i - relative luminous intensity vrel red - wavelength ( nm ) 0 10 20 30 40 50 60 70 80 90 100 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 v f - forward voltag e(v) 17047 f i - forward current ( ma ) red -200 -150 -100 -50 0 50 100 150 200 250 -50 -25 0 25 50 75 100 t amb - ambient temperature ( c) 17039 v - change of forward voltage ( mv ) f 10 ma 30 ma 50 ma red
www.vishay.com 6 document number 83146 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y320. vishay semiconductors figure 13. relative luminous intensity vs. amb. temperature figure 14. change of dominant wavelength vs. ambient temperature figure 15. relative luminous intensity vs. forward current 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 t amb - ambient temperature ( c) 17040 i - relative luminous intensity vrel red -5 -4 -3 -2 -1 0 1 2 3 -50 -25 0 25 50 75 100 t amb - ambient temperature ( c) 17041 - change of dom. w avelength (nm) ? d red 0.01 0 1 10 1 10 100 i f - forward current ( ma ) 17042 i - relative luminous intensity vrel red figure 16. change of dominant wavelength vs. forward current figure 17. relative intensity vs. wavelength figure 18. change of forward voltage vs. ambient temperature -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 80 90 100 17043 i f - forward current ( ma ) red - change of dom. w avelength (nm) ? d 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 560 570 580 590 600 610 620 630 640 650 660 16314 soft orange i - relative luminous intensity vrel - wavelength ( nm ) ?200 ?150 ?100 ?50 0 50 100 150 200 250 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17020 v ? change of forward voltage (mv) f 10 ma 30 ma 50 ma soft orange
vishay tlmk / o / s / y320. document number 83146 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 7 figure 19. relative luminous intensity vs. amb. temperature figure 20. change of dominant wavelength vs. ambient temperature figure 21. relative luminous intensity vs. forward current 0.0 0.5 1.0 1.5 2.0 2.5 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17021 i ?relative luminous intensity vrel soft orange ?6 ?4 ?2 0 2 4 6 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17022 ? change of dom. wavelength (nm) d soft orange 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forward current ( ma ) 17023 i ?relative luminous intensity vrel soft orange figure 22. change of dominant wavelength vs. forward current figure 23. relative intensity vs. wavelength figure 24. change of forward voltage vs. ambient temperature ?1.5 ?1.0 ?0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 80 90 100 17024 ? change of dom. wavelength (nm) d i f ? forward current ( ma ) soft orange 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 540 550 560 570 580 590 600 610 620 630 640 - wavelength ( nm ) 16008 i - relative luminous intensity vrel yellow ?200 ?150 ?100 ?50 0 50 100 150 200 250 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17015 v ? change of forward voltage (mv) f 10 ma 30 ma 50 ma yellow
www.vishay.com 8 document number 83146 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y320. vishay semiconductors figure 25. relative luminous intensity vs. amb. temperature figure 26. change of dominant wavelength vs. ambient temperature figure 27. relative luminous intensity vs. forward current 0.0 0.5 1.0 1.5 2.0 2.5 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17016 i ?relative luminous intensity vrel yellow ?6 ?4 ?2 0 2 4 6 ?50 ?25 0 25 50 75 100 t amb ? ambient temperature ( q c ) 17017 ? change of dom. wavelength (nm) d yellow 0.01 0.10 1.00 10.00 1.00 10.00 100.00 i f ? forward current ( ma ) 17018 i ?relative luminous intensity vrel yellow figure 28. change of dominant wavelength vs. forward current figure 29. forward current vs. forward voltage figure 30. forward current vs. pulse length ?1.5 ?1.0 ?0.5 0.0 0.5 1.0 1.5 10 20 30 40 50 60 70 80 90 100 17019 ? change of dom. wavelength (nm) d i f ? forward current ( ma ) yellow 0 10 20 30 40 50 60 70 80 90 100 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 v f ? forward voltage ( v ) 17046 f i ? forward current ( ma ) yellow soft orange red 0.00 0.02 0.04 0.06 0.08 0.10 0.12 t p - pulse length (s) i - forward current (a) f 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 t p /t = 0.005 0.05 0.5 17044
vishay tlmk / o / s / y320. document number 83146 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 9 forward voltage classification color classification luminous intensit y classification group name on label one packing unit/tape contains only one classification group of luminous intensity, color and forward voltage only one single classification groups is not available the given groups are not order codes , customer specific group combinat ions require marketing agreement no color subgrouping for super red group forward voltage (v) min max 11.852.25 22.152.55 group dominant wavelength (nm) red soft orange ye l l o w min max min max min max 1 611 618 598 601 581 584 2 614 622 600 603 583 586 3 602 605 585 588 4 604 607 587 590 5 606 609 589 592 6 608 611 591 594 group luminous intensity (mcd) min max xa 160 250 xb 200 320 ya 250 400 yb 320 500 za 400 630 zb 500 800 0a 630 1000 0b 800 1250 luminous intensity group halfgroup wavelength forward voltage zb21
www.vishay.com 10 document number 83146 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y320. vishay semiconductors taping 0.25 2.2 2.0 1.85 1.65 4.1 3.9 2.05 1.95 3.5 3.1 4.1 3.9 1.6 1.4 8.3 7.7 5.75 5.25 3.6 3.4 4.0 3.6 18596 cathode anode cathode tape dimensions in mm for plcc-3
vishay tlmk / o / s / y320. document number 83146 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 11 recommended pad design (wave-soldering), r thja = 270 k/w recommended pad design (reflow-soldering), r thja = 270 k/w 16260 16261
www.vishay.com 12 document number 83146 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y320. vishay semiconductors optional pad design (wave-soldering), r thja = 290 k/w optional pad design (reflow-soldering), r thja = 290 k/w 16262 16263
vishay tlmk / o / s / y320. document number 83146 rev. 1.4, 31-aug-04 vishay semiconductors www.vishay.com 13 package dimensions in mm mounting pad layout 3.5 0.2 1.65 + 0.10 - 0.05 pin identification 2.8 + 0.15 ? 2.4 3 + 0.15 1.2 2.6 (2.8) 1.6 (1.9) area covered with solder resist dimensions: ir and vaporphase (wave soldering) technical drawings according to din specifications drawing-no. : 6.541-5054.01-4 issue: 1; 19.02.04 0.4 0.9 4 4 0.5 16276 0.85
www.vishay.com 14 document number 83146 rev. 1.4, 31-aug-04 vishay tlmk / o / s / y320. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423

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